Infineon Technologies - IRF1010NSTRRPBF

KEY Part #: K6419295

IRF1010NSTRRPBF Bei (USD) [102494pcs Hisa]

  • 1 pcs$0.38150
  • 800 pcs$0.34644

Nambari ya Sehemu:
IRF1010NSTRRPBF
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 55V 85A D2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - IGBTs - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Arrays, Viwango - Rectifiers - Moja and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF1010NSTRRPBF Sifa za Bidhaa

Nambari ya Sehemu : IRF1010NSTRRPBF
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 55V 85A D2PAK
Mfululizo : HEXFET®
Hali ya Sehemu : Not For New Designs
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 55V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 85A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 11 mOhm @ 43A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 120nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3210pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 180W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D2PAK
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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