Infineon Technologies - AUIRF7665S2TR

KEY Part #: K6420412

AUIRF7665S2TR Bei (USD) [192312pcs Hisa]

  • 1 pcs$0.19233
  • 4,800 pcs$0.17648

Nambari ya Sehemu:
AUIRF7665S2TR
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 100V 77A DIRECTFET2.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCRs - Moduli, Thyristors - SCR, Moduli za Dereva za Nguvu, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - DIAC, SIDAC, Viwango - RF and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AUIRF7665S2TR Sifa za Bidhaa

Nambari ya Sehemu : AUIRF7665S2TR
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 100V 77A DIRECTFET2
Mfululizo : HEXFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.1A (Ta), 14.4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 62 mOhm @ 8.9A, 10V
Vgs (th) (Max) @ Id : 5V @ 25µA
Malango ya Lango (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 515pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.4W (Ta), 30W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : DIRECTFET SB
Kifurushi / Kesi : DirectFET™ Isometric SB

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