Nexperia USA Inc. - PDTD113ZT,215

KEY Part #: K6528501

PDTD113ZT,215 Bei (USD) [1173564pcs Hisa]

  • 1 pcs$0.03152
  • 3,000 pcs$0.02492
  • 6,000 pcs$0.02242
  • 15,000 pcs$0.01993
  • 30,000 pcs$0.01869
  • 75,000 pcs$0.01661

Nambari ya Sehemu:
PDTD113ZT,215
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
TRANS PREBIAS NPN 250MW TO236AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Transistors - JFETs and Transistors - Kusudi Maalum ...
Faida ya Ushindani:
We specialize in Nexperia USA Inc. PDTD113ZT,215 electronic components. PDTD113ZT,215 can be shipped within 24 hours after order. If you have any demands for PDTD113ZT,215, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PDTD113ZT,215 Sifa za Bidhaa

Nambari ya Sehemu : PDTD113ZT,215
Mzalishaji : Nexperia USA Inc.
Maelezo : TRANS PREBIAS NPN 250MW TO236AB
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 500mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 1 kOhms
Upinzani - Base ya Emitter (R2) : 10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : -
Nguvu - Max : 250mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji : TO-236AB

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