BSB012NE2LXIXUMA1 Bei (USD) [95125pcs Hisa]
- 1 pcs$0.41105
- 5,000 pcs$0.30541
- Nambari ya Sehemu:
- BSB012NE2LXIXUMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 25V 170A WDSON.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moja, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Kufika and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSB012NE2LXIXUMA1 electronic components. BSB012NE2LXIXUMA1 can be shipped within 24 hours after order. If you have any demands for BSB012NE2LXIXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB012NE2LXIXUMA1 Sifa za Bidhaa
Nambari ya Sehemu :
BSB012NE2LXIXUMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 25V 170A WDSON
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
25V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
170A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
82nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
5852pF @ 12V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.8W (Ta), 57W (Tc)
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
MG-WDSON-2, CanPAK M™
Kifurushi / Kesi :
3-WDSON
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