Infineon Technologies - BSB012NE2LXIXUMA1

KEY Part #: K6419160

BSB012NE2LXIXUMA1 Bei (USD) [95125pcs Hisa]

  • 1 pcs$0.41105
  • 5,000 pcs$0.30541

Nambari ya Sehemu:
BSB012NE2LXIXUMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 25V 170A WDSON.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - JFETs, Thyristors - TRIAC, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moja, Viwango - Rectifiers - Arrays and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSB012NE2LXIXUMA1 Sifa za Bidhaa

Nambari ya Sehemu : BSB012NE2LXIXUMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 25V 170A WDSON
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 25V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 170A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 82nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 5852pF @ 12V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.8W (Ta), 57W (Tc)
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : MG-WDSON-2, CanPAK M™
Kifurushi / Kesi : 3-WDSON