[4153pcs Hisa]
- Nambari ya Sehemu:
- SI5511DC-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N/P-CH 30V 4A 1206-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Arrays, Thyristors - TRIAC, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - IGBTs - Moja ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI5511DC-T1-GE3 electronic components. SI5511DC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5511DC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5511DC-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI5511DC-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N/P-CH 30V 4A 1206-8
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N and P-Channel
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4A, 3.6A
Njia ya Kutumia (Max) @ Id, Vgs :
55 mOhm @ 4.8A, 4.5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
7.1nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
435pF @ 15V
Nguvu - Max :
3.1W, 2.6W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SMD, Flat Lead
Kifurushi cha Kifaa cha Mtoaji :
1206-8 ChipFET™
Habari mpya kabisa
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