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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - Bipolar (BJT) - Moja
  5. MJD253-1G

ON Semiconductor - MJD253-1G

KEY Part #: K6380940

MJD253-1G Bei (USD) [124694pcs Hisa]

  • 1 pcs$0.29662
  • 1,650 pcs$0.12624
Nambari ya Sehemu:
MJD253-1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS PNP 100V 4A IPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moja, Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa, Transistors - Kusudi Maalum and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in ON Semiconductor MJD253-1G electronic components. MJD253-1G can be shipped within 24 hours after order. If you have any demands for MJD253-1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MJD253-1G Sifa za Bidhaa

Nambari ya Sehemu : MJD253-1G
Mzalishaji : ON Semiconductor
Maelezo : TRANS PNP 100V 4A IPAK
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : PNP
Sasa - Mtoza (Ic) (Max) : 4A
Voltage - Kukusanya Emitter Kuvunja (Max) : 100V
Vce Saturdayation (Max) @ Ib, Ic : 600mV @ 100mA, 1A
Sasa - Ushuru Mtoaji : 100nA (ICBO)
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 40 @ 200mA, 1V
Nguvu - Max : 1.4W
Mara kwa mara - Mpito : 40MHz
Joto la Kufanya kazi : -65°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-251-3 Short Leads, IPak, TO-251AA
Kifurushi cha Kifaa cha Mtoaji : I-PAK

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