Vishay Semiconductor Diodes Division - NSB8MTHE3_A/I

KEY Part #: K6439193

NSB8MTHE3_A/I Bei (USD) [104538pcs Hisa]

  • 1 pcs$0.37403
  • 800 pcs$0.33139

Nambari ya Sehemu:
NSB8MTHE3_A/I
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 1KV 8A TO263AB. Rectifiers 8A 1000V Glass Psvtd AEC-Q101 Qualified
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Arrays and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division NSB8MTHE3_A/I electronic components. NSB8MTHE3_A/I can be shipped within 24 hours after order. If you have any demands for NSB8MTHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSB8MTHE3_A/I Sifa za Bidhaa

Nambari ya Sehemu : NSB8MTHE3_A/I
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 1KV 8A TO263AB
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Sasa - Wastani Aliyerekebishwa (Io) : 8A
Voltage - Mbele (Vf) (Max) @ Kama : 1.1V @ 8A
Kasi : Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : -
Sasa - Rejea kuvuja @ Vr : 10µA @ 1000V
Uwezo @ Vr, F : 55pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : TO-263AB
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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