ON Semiconductor - FDD6680AS

KEY Part #: K6393135

FDD6680AS Bei (USD) [211227pcs Hisa]

  • 1 pcs$0.17598
  • 2,500 pcs$0.17511

Nambari ya Sehemu:
FDD6680AS
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 30V 55A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Thyristors - SCR, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDD6680AS electronic components. FDD6680AS can be shipped within 24 hours after order. If you have any demands for FDD6680AS, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD6680AS Sifa za Bidhaa

Nambari ya Sehemu : FDD6680AS
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 30V 55A DPAK
Mfululizo : PowerTrench®, SyncFET™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 55A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 10.5 mOhm @ 12.5A, 10V
Vgs (th) (Max) @ Id : 3V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 29nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1200pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 60W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-252
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63