Vishay Semiconductor Diodes Division - EGP31B-E3/C

KEY Part #: K6440158

EGP31B-E3/C Bei (USD) [247410pcs Hisa]

  • 1 pcs$0.14950

Nambari ya Sehemu:
EGP31B-E3/C
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 100V 3A DO201AD. Rectifiers 3A,100V,50NS
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Thyristors - SCR, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moduli, Thyristors - SCRs - Moduli and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division EGP31B-E3/C electronic components. EGP31B-E3/C can be shipped within 24 hours after order. If you have any demands for EGP31B-E3/C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGP31B-E3/C Sifa za Bidhaa

Nambari ya Sehemu : EGP31B-E3/C
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 100V 3A DO201AD
Mfululizo : SUPERECTIFIER®
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Sasa - Wastani Aliyerekebishwa (Io) : 3A
Voltage - Mbele (Vf) (Max) @ Kama : 950mV @ 3A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 50ns
Sasa - Rejea kuvuja @ Vr : 1µA @ 100V
Uwezo @ Vr, F : 117pF @ 4V, 1MHz
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : DO-201AD, Axial
Kifurushi cha Kifaa cha Mtoaji : DO-201AD
Joto la Kufanya kazi - Junction : -65°C ~ 175°C

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