Micron Technology Inc. - MT53D1G64D8NZ-046 WT ES:E

KEY Part #: K914411

[8521pcs Hisa]


    Nambari ya Sehemu:
    MT53D1G64D8NZ-046 WT ES:E
    Mzalishaji:
    Micron Technology Inc.
    Maelezo ya kina:
    IC DRAM 64G 2133MHZ FBGA. DRAM
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: PMIC - Mabadiliko ya Usambazaji wa Nguvu, Madereva, Mantiki - Watafsiri, Shifters za Kiwango, Kusudi Maalum la Sauti, Linear - Amplifiers - Chombo, OP Amps, Buffer Amps, Maingiliano - Buffers za Signal, Wanaorudia, Spide, Linear - Amplifiers - Amps za Video na Moduli, Kumbukumbu - Proms za Usanidi kwa FPGAs and Maelewano - Sensor, Kugusa uwezo ...
    Faida ya Ushindani:
    We specialize in Micron Technology Inc. MT53D1G64D8NZ-046 WT ES:E electronic components. MT53D1G64D8NZ-046 WT ES:E can be shipped within 24 hours after order. If you have any demands for MT53D1G64D8NZ-046 WT ES:E, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    MT53D1G64D8NZ-046 WT ES:E Sifa za Bidhaa

    Nambari ya Sehemu : MT53D1G64D8NZ-046 WT ES:E
    Mzalishaji : Micron Technology Inc.
    Maelezo : IC DRAM 64G 2133MHZ FBGA
    Mfululizo : -
    Hali ya Sehemu : Active
    Aina ya kumbukumbu : Volatile
    Fomati ya kumbukumbu : DRAM
    Teknolojia : SDRAM - Mobile LPDDR4
    Saizi ya kumbukumbu : 64Gb (1G x 64)
    Usafirishaji wa Saa : 2133MHz
    Andika Wakati wa Msaada - Neno, Ukurasa : -
    Wakati wa Upataji : -
    Maingiliano ya kumbukumbu : -
    Voltage - Ugavi : 1.1V
    Joto la Kufanya kazi : -30°C ~ 85°C (TC)
    Aina ya Kuinua : -
    Kifurushi / Kesi : -
    Kifurushi cha Kifaa cha Mtoaji : -

    Unaweza pia Kuvutiwa Na
    • 25LC256T-M/MF

      Microchip Technology

      IC EEPROM 256K SPI 10MHZ 8DFN. EEPROM Serial EEPROM 256K 32K X 8, 2.5V MIL T

    • 71T75902S75PFGI8

      IDT, Integrated Device Technology Inc

      IC SRAM 18M PARALLEL 100TQFP. SRAM 2.5V CORE ZBT X18 18M

    • 70V25S25PFGI8

      IDT, Integrated Device Technology Inc

      IC SRAM 128K PARALLEL 100TQFP. SRAM 8Kx16, 3.3V DUAL- PORT RAM

    • RMWV3216AGBG-5S2#KC0

      Renesas Electronics America

      SRAM 32MB 3V X16 FBGA48 55NS -40. SRAM SRAM 32MB 3V X16 FBGA48 55NS -40TO85C

    • R1LV3216RSD-5SI#S0

      Renesas Electronics America

      IC SRAM 32M PARALLEL 52TSOP II.

    • MT25QL02GCBB8E12-0SIT

      Micron Technology Inc.

      IC FLASH 2G SPI 133MHZ 24TPBGA.