MT28EW512ABA1HJS-0AAT Bei (USD) [16037pcs Hisa]
- 1 pcs$2.85735
- Nambari ya Sehemu:
- MT28EW512ABA1HJS-0AAT
- Mzalishaji:
- Micron Technology Inc.
- Maelezo ya kina:
- IC FLASH 512M PARALLEL 56TSOP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maingiliano - Wasafirishaji, Watangazaji, Wabadili, PMIC - Mabadiliko ya Usambazaji wa Nguvu, Madereva, Upataji wa Takwimu - Dijiti kwa Analog za Analog (, Maingiliano - Sensor na Njia za Detector, PMIC - Usimamizi wa Batri, PMIC - Madereva ya LED, Iliyoingizwa - Mfumo kwenye Chip (SoC) and Upataji wa data - ADC / DACs - Kusudi Maalum ...
- Faida ya Ushindani:
- We specialize in Micron Technology Inc. MT28EW512ABA1HJS-0AAT electronic components. MT28EW512ABA1HJS-0AAT can be shipped within 24 hours after order. If you have any demands for MT28EW512ABA1HJS-0AAT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MT28EW512ABA1HJS-0AAT Sifa za Bidhaa
Nambari ya Sehemu :
MT28EW512ABA1HJS-0AAT
Mzalishaji :
Micron Technology Inc.
Maelezo :
IC FLASH 512M PARALLEL 56TSOP
Mfululizo :
Automotive, AEC-Q100
Hali ya Sehemu :
Active
Aina ya kumbukumbu :
Non-Volatile
Fomati ya kumbukumbu :
FLASH
Teknolojia :
FLASH - NOR
Saizi ya kumbukumbu :
512Mb (64M x 8, 32M x 16)
Usafirishaji wa Saa :
-
Andika Wakati wa Msaada - Neno, Ukurasa :
60ns
Wakati wa Upataji :
105ns
Maingiliano ya kumbukumbu :
Parallel
Voltage - Ugavi :
2.7V ~ 3.6V
Joto la Kufanya kazi :
-40°C ~ 105°C (TA)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
56-TFSOP (0.724", 18.40mm Width)
Kifurushi cha Kifaa cha Mtoaji :
56-TSOP (14x20)
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
-
-
AT28HC256-12SU-T
Microchip Technology
IC EEPROM 256K PARALLEL 28SOIC. EEPROM 120NS, SOIC, IND TEMP, GREEN
-
AT28C256E-15SU-T
Microchip Technology
IC EEPROM 256K PARALLEL 28SOIC. EEPROM 150NS, SOIC, IND TEMP, GREEN
-
W9825G2JB-6I TR
Winbond Electronics
IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M SDR SDRAM x32, 166MHz, Ind Temp T&R
-
TC58NYG2S0HBAI4
Toshiba Memory America, Inc.
4GB SLC NAND 24NM BGA 9X11 1.8V. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
Sehemu za Moto
- CY7C028V-15AXIT
- AT49LH004-33TC-T
- MT28F640J3BS-115 ET TR
- MT28F004B5VG-8 BET
- AT25F4096W-10SU-2.7
- MT29F4G08BBBWP TR
- AT27C010-12JI
- AT25320T1-10TI
- MT40A4G4HPR-075H:G TR
- S70WS512N00BFWAB3
- MT29F256G08CECEBJ4-37ITRES:E TR
- MT53D512M32D2NP-053 WT ES:D
- MT29F128G08AECBBH6-6IT:B
- S25FL032P0XMFI013M
- S99-50204A
- IS42SM16160D-7BLI
- EDFP112A3PD-GD-F-D
- S70FS01GSDSBHM210
- IS61DDB41M36A-300M3LI
- 7028L15PFI
- AS4C128M16D3L-12BANTR
- S25FL132K0XBHI033
- MT29F64G08AFAAAWP-IT:A
- IDT71016S12YI8
- JS28F256P30BFF TR
- MT46H128M16LFB7-5 IT:B
- AT49BV160DT-70CU
- MT29F2G01AAAEDH4:E TR
- AT25DF321-SU
- 93C86AT-I/ST
- R1LV0408DSB-5SI#B0
- M29W128GL70ZS6E
- M28W640HSB70ZA6E
- IDT71V65803S133PF8
- IDT71V25761SA200BG8
- 7134SA55J8
- 70V06L20PFI
- MT46V16M16P-75:F TR
- CYDD09S36V18-167BBXC
- S25FS512SDSBHA213