FESB16JT-E3/81 Bei (USD) [93548pcs Hisa]
- 1 pcs$0.41797
- 800 pcs$0.38285
- 1,600 pcs$0.28592
- 2,400 pcs$0.26686
- 5,600 pcs$0.25415
- Nambari ya Sehemu:
- FESB16JT-E3/81
- Mzalishaji:
- Vishay Semiconductor Diodes Division
- Maelezo ya kina:
- DIODE GEN PURP 600V 16A TO263AB. Rectifiers 16 Amp 600 Volt 50ns
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - RF, Viwango - Zener - Moja, Transistors - JFETs, Transistors - Bipolar (BJT) - Moja and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in Vishay Semiconductor Diodes Division FESB16JT-E3/81 electronic components. FESB16JT-E3/81 can be shipped within 24 hours after order. If you have any demands for FESB16JT-E3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FESB16JT-E3/81 Sifa za Bidhaa
Nambari ya Sehemu :
FESB16JT-E3/81
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 600V 16A TO263AB
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Sasa - Wastani Aliyerekebishwa (Io) :
16A
Voltage - Mbele (Vf) (Max) @ Kama :
1.5V @ 16A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
50ns
Sasa - Rejea kuvuja @ Vr :
10µA @ 600V
Uwezo @ Vr, F :
145pF @ 4V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji :
TO-263AB
Joto la Kufanya kazi - Junction :
-65°C ~ 150°C
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Vishay Semiconductor Diodes Division
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