Infineon Technologies - IRF8302MTRPBF

KEY Part #: K6419102

IRF8302MTRPBF Bei (USD) [91467pcs Hisa]

  • 1 pcs$0.68043
  • 4,800 pcs$0.67705

Nambari ya Sehemu:
IRF8302MTRPBF
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 30V 31A MX.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Viwango - Zener - Arrays, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Moduli za Dereva za Nguvu, Viwango - Bridge Rectifiers and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF8302MTRPBF Sifa za Bidhaa

Nambari ya Sehemu : IRF8302MTRPBF
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 30V 31A MX
Mfululizo : HEXFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 31A (Ta), 190A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.8 mOhm @ 31A, 10V
Vgs (th) (Max) @ Id : 2.35V @ 150µA
Malango ya Lango (Qg) (Max) @ Vgs : 53nC @ 4.5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 6030pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.8W (Ta), 104W (Tc)
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : DIRECTFET™ MX
Kifurushi / Kesi : DirectFET™ Isometric MX