Micron Technology Inc. - EDB1316BDBH-1DAUT-F-R TR

KEY Part #: K918286

EDB1316BDBH-1DAUT-F-R TR Bei (USD) [13991pcs Hisa]

  • 1,000 pcs$3.67379

Nambari ya Sehemu:
EDB1316BDBH-1DAUT-F-R TR
Mzalishaji:
Micron Technology Inc.
Maelezo ya kina:
IC DRAM 1G PARALLEL 134VFBGA.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Upataji wa Takwimu - Mwisho wa Analog Mbele (AFE), ICs Maalum, Mantiki - Vihesabu, Binafsi, Maelewano - Sensor, Kugusa uwezo, Mantiki - Latches, Saa / Saa - Batri za IC, Maingiliano - Maalum and Maingiliano - Moduli ...
Faida ya Ushindani:
We specialize in Micron Technology Inc. EDB1316BDBH-1DAUT-F-R TR electronic components. EDB1316BDBH-1DAUT-F-R TR can be shipped within 24 hours after order. If you have any demands for EDB1316BDBH-1DAUT-F-R TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EDB1316BDBH-1DAUT-F-R TR Sifa za Bidhaa

Nambari ya Sehemu : EDB1316BDBH-1DAUT-F-R TR
Mzalishaji : Micron Technology Inc.
Maelezo : IC DRAM 1G PARALLEL 134VFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - Mobile LPDDR2
Saizi ya kumbukumbu : 1Gb (64M x 16)
Usafirishaji wa Saa : 533MHz
Andika Wakati wa Msaada - Neno, Ukurasa : -
Wakati wa Upataji : -
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.14V ~ 1.95V
Joto la Kufanya kazi : -40°C ~ 125°C (TC)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 134-VFBGA
Kifurushi cha Kifaa cha Mtoaji : 134-VFBGA (10x11.5)

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