Toshiba Semiconductor and Storage - 1SS387CT,L3F

KEY Part #: K6428275

1SS387CT,L3F Bei (USD) [3056256pcs Hisa]

  • 1 pcs$0.01277
  • 10,000 pcs$0.01271
  • 30,000 pcs$0.01196
  • 50,000 pcs$0.01121
  • 100,000 pcs$0.00997

Nambari ya Sehemu:
1SS387CT,L3F
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
DIODE GEN PURP 80V 100MA CST2. Diodes - General Purpose, Power, Switching Switching Diode 80V 100MA CST2
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCR, Transistors - Bipolar (BJT) - RF, Thyristors - TRIAC, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - DIAC, SIDAC and Transistors - Bipolar (BJT) - Moja ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage 1SS387CT,L3F electronic components. 1SS387CT,L3F can be shipped within 24 hours after order. If you have any demands for 1SS387CT,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS387CT,L3F Sifa za Bidhaa

Nambari ya Sehemu : 1SS387CT,L3F
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : DIODE GEN PURP 80V 100MA CST2
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 80V
Sasa - Wastani Aliyerekebishwa (Io) : 100mA
Voltage - Mbele (Vf) (Max) @ Kama : 1.2V @ 100mA
Kasi : Small Signal =< 200mA (Io), Any Speed
Rudisha Wakati wa Kuokoa (trr) : 1.6ns
Sasa - Rejea kuvuja @ Vr : 500nA @ 80V
Uwezo @ Vr, F : 0.5pF @ 0V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SOD-882
Kifurushi cha Kifaa cha Mtoaji : CST2
Joto la Kufanya kazi - Junction : 150°C (Max)

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