[565pcs Hisa]
- Nambari ya Sehemu:
- SI5855DC-T1-E3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CH 20V 2.7A 1206-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Moduli za Dereva za Nguvu, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC and Viwango - Zener - Arrays ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI5855DC-T1-E3 electronic components. SI5855DC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5855DC-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5855DC-T1-E3 Sifa za Bidhaa
Nambari ya Sehemu :
SI5855DC-T1-E3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 20V 2.7A 1206-8
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.7A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
110 mOhm @ 2.7A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
7.7nC @ 4.5V
Vgs (Max) :
±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Makala ya FET :
Schottky Diode (Isolated)
Kuondoa Nguvu (Max) :
1.1W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
1206-8 ChipFET™
Kifurushi / Kesi :
8-SMD, Flat Lead
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