DDTA114ECA-7-F Bei (USD) [2141057pcs Hisa]
- 1 pcs$0.01728
- 3,000 pcs$0.01601
- 6,000 pcs$0.01392
- 15,000 pcs$0.01183
- 30,000 pcs$0.01114
- 75,000 pcs$0.01044
- 150,000 pcs$0.00905
- Nambari ya Sehemu:
- DDTA114ECA-7-F
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- TRANS PREBIAS PNP 200MW SOT23-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - JFETs, Thyristors - SCRs - Moduli, Transistors - IGBTs - Moja, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - RF, Thyristors - SCR and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DDTA114ECA-7-F electronic components. DDTA114ECA-7-F can be shipped within 24 hours after order. If you have any demands for DDTA114ECA-7-F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DDTA114ECA-7-F Sifa za Bidhaa
Nambari ya Sehemu :
DDTA114ECA-7-F
Mzalishaji :
Diodes Incorporated
Maelezo :
TRANS PREBIAS PNP 200MW SOT23-3
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
10 kOhms
Upinzani - Base ya Emitter (R2) :
10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
30 @ 5mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 500µA, 10mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
250MHz
Nguvu - Max :
200mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji :
SOT-23-3
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