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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - Bipolar (BJT) - Moja, Iliyopendekezw
  5. MMUN2111LT1

ON Semiconductor - MMUN2111LT1

KEY Part #: K6526668

[3088pcs Hisa]

    Nambari ya Sehemu:
    MMUN2111LT1
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    TRANS PREBIAS PNP 246MW SOT23-3.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Thyristors - TRIAC, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - RF, Transistors - JFETs, Viwango - Rectifiers - Moja, Viwango - Bridge Rectifiers and Viwango - Zener - Arrays ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor MMUN2111LT1 electronic components. MMUN2111LT1 can be shipped within 24 hours after order. If you have any demands for MMUN2111LT1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    MMUN2111LT1 Sifa za Bidhaa

    Nambari ya Sehemu : MMUN2111LT1
    Mzalishaji : ON Semiconductor
    Maelezo : TRANS PREBIAS PNP 246MW SOT23-3
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya Transistor : PNP - Pre-Biased
    Sasa - Mtoza (Ic) (Max) : 100mA
    Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
    Upinzani - Msingi (R1) : 10 kOhms
    Upinzani - Base ya Emitter (R2) : 10 kOhms
    DC Sasa Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V
    Vce Saturdayation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
    Sasa - Ushuru Mtoaji : 500nA
    Mara kwa mara - Mpito : -
    Nguvu - Max : 246mW
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
    Kifurushi cha Kifaa cha Mtoaji : SOT-23-3 (TO-236)

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