Infineon Technologies - SPB18P06P

KEY Part #: K6409747

[174pcs Hisa]


    Nambari ya Sehemu:
    SPB18P06P
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    MOSFET P-CH 60V 18.7A D2PAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Viwango - Zener - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - DIAC, SIDAC, Transistors - Kusudi Maalum, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kufika and Transistors - IGBTs - Moja ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies SPB18P06P electronic components. SPB18P06P can be shipped within 24 hours after order. If you have any demands for SPB18P06P, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SPB18P06P Sifa za Bidhaa

    Nambari ya Sehemu : SPB18P06P
    Mzalishaji : Infineon Technologies
    Maelezo : MOSFET P-CH 60V 18.7A D2PAK
    Mfululizo : SIPMOS®
    Hali ya Sehemu : Obsolete
    Aina ya FET : P-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 60V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 18.7A (Ta)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 130 mOhm @ 13.2A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Malango ya Lango (Qg) (Max) @ Vgs : 28nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 860pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 81.1W (Ta)
    Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : D²PAK (TO-263AB)
    Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB