Infineon Technologies - BSM75GB170DN2HOSA1

KEY Part #: K6533459

[826pcs Hisa]


    Nambari ya Sehemu:
    BSM75GB170DN2HOSA1
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    IGBT 1700V 110A 625W MODULE.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Thyristors - SCR, Transistors - FET, MOSFETs - RF, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - JFETs, Thyristors - SCRs - Moduli and Viwango - Rectifiers - Arrays ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies BSM75GB170DN2HOSA1 electronic components. BSM75GB170DN2HOSA1 can be shipped within 24 hours after order. If you have any demands for BSM75GB170DN2HOSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSM75GB170DN2HOSA1 Sifa za Bidhaa

    Nambari ya Sehemu : BSM75GB170DN2HOSA1
    Mzalishaji : Infineon Technologies
    Maelezo : IGBT 1700V 110A 625W MODULE
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya IGBT : -
    Usanidi : Half Bridge
    Voltage - Kukusanya Emitter Kuvunja (Max) : 1700V
    Sasa - Mtoza (Ic) (Max) : 110A
    Nguvu - Max : 625W
    Vce (on) (Max) @ Vge, Ic : 3.9V @ 15V, 75A
    Sasa - Ushuru Mtoaji : -
    Uingilivu Ufungaji (Wakuu) @ Vce : 11nF @ 25V
    Uingizaji : Standard
    Mtaalam wa NTC : No
    Joto la Kufanya kazi : 150°C (TJ)
    Aina ya Kuinua : Chassis Mount
    Kifurushi / Kesi : Module
    Kifurushi cha Kifaa cha Mtoaji : Module

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