IPD65R650CEATMA1 Bei (USD) [2905pcs Hisa]
- 2,500 pcs$0.14383
- Nambari ya Sehemu:
- IPD65R650CEATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 650V 10.1A TO252.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moduli, Thyristors - SCR, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moja, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - Moja and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPD65R650CEATMA1 electronic components. IPD65R650CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R650CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD65R650CEATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPD65R650CEATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 650V 10.1A TO252
Mfululizo :
CoolMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10.1A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
650 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 0.21mA
Malango ya Lango (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
440pF @ 100V
Makala ya FET :
Super Junction
Kuondoa Nguvu (Max) :
86W (Tc)
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO252-3
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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