Nambari ya Sehemu :
FQD2N100TF
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 1000V 1.6A DPAK
Hali ya Sehemu :
Obsolete
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
9 Ohm @ 800mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
15.5nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
520pF @ 25V
Kuondoa Nguvu (Max) :
2.5W (Ta), 50W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D-Pak
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63