ON Semiconductor - NVD5C688NLT4G

KEY Part #: K6403212

NVD5C688NLT4G Bei (USD) [354072pcs Hisa]

  • 1 pcs$0.17139
  • 2,500 pcs$0.17054

Nambari ya Sehemu:
NVD5C688NLT4G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CHANNEL 60V 17A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Moja, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCR and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVD5C688NLT4G Sifa za Bidhaa

Nambari ya Sehemu : NVD5C688NLT4G
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CHANNEL 60V 17A DPAK
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 17A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 27.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 3.4nC @ 4.5V
Vgs (Max) : ±16V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 400pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 18W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : DPAK (SINGLE GAUGE)
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63