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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  5. 71V416S12YG

IDT, Integrated Device Technology Inc - 71V416S12YG

KEY Part #: K940990

71V416S12YG Bei (USD) [33414pcs Hisa]

  • 1 pcs$1.37826
  • 256 pcs$1.37141
Nambari ya Sehemu:
71V416S12YG
Mzalishaji:
IDT, Integrated Device Technology Inc
Maelezo ya kina:
IC SRAM 4M PARALLEL 44SOJ. SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Mantiki - Vihesabu, Binafsi, Maingiliano - Rekodi ya Sauti na Uchezaji, PMIC - Waongofu wa AC DC, Dawati za Offline, PMIC - RMS kwa vibadilishaji vya DC, PMIC - Madereva wa Magari, Watawala, Maingiliano - Wasafirishaji, Watangazaji, Wabadili, Linear - Amplifiers - Chombo, OP Amps, Buffer Amps and PMIC - Madereva wa Laser ...
Faida ya Ushindani:
We specialize in IDT, Integrated Device Technology Inc 71V416S12YG electronic components. 71V416S12YG can be shipped within 24 hours after order. If you have any demands for 71V416S12YG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

71V416S12YG Sifa za Bidhaa

Nambari ya Sehemu : 71V416S12YG
Mzalishaji : IDT, Integrated Device Technology Inc
Maelezo : IC SRAM 4M PARALLEL 44SOJ
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : SRAM
Teknolojia : SRAM - Asynchronous
Saizi ya kumbukumbu : 4Mb (256K x 16)
Usafirishaji wa Saa : -
Andika Wakati wa Msaada - Neno, Ukurasa : 12ns
Wakati wa Upataji : 12ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 3V ~ 3.6V
Joto la Kufanya kazi : 0°C ~ 70°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 44-BSOJ (0.400", 10.16mm Width)
Kifurushi cha Kifaa cha Mtoaji : 44-SOJ
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