Alliance Memory, Inc. - AS4C4M32S-6BINTR

KEY Part #: K939881

AS4C4M32S-6BINTR Bei (USD) [27168pcs Hisa]

  • 1 pcs$1.68667
  • 2,000 pcs$1.62420

Nambari ya Sehemu:
AS4C4M32S-6BINTR
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 128M PARALLEL 90TFBGA. DRAM 128M, 3.3V, 4M x 32 SDRAM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Iliyoingizwa - Microcontroller, Microprocessor, Mo, PMIC - Mabadiliko ya Usambazaji wa Nguvu, Madereva, Mantiki - Vipimo, Kumbukumbu, Mantiki - Msajili wa Shift, Maingiliano - Watawala, Mantiki - Buffa, Madereva, Wapokeaji, Waendeshaji and PMIC - Usajili wa Voltage - Kusudi Maalum ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C4M32S-6BINTR electronic components. AS4C4M32S-6BINTR can be shipped within 24 hours after order. If you have any demands for AS4C4M32S-6BINTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C4M32S-6BINTR Sifa za Bidhaa

Nambari ya Sehemu : AS4C4M32S-6BINTR
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 128M PARALLEL 90TFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM
Saizi ya kumbukumbu : 128Mb (4M x 32)
Usafirishaji wa Saa : 166MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 2ns
Wakati wa Upataji : 5.4ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 3V ~ 3.6V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 90-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 90-TFBGA (8x13)

Unaweza pia Kuvutiwa Na
  • MB85AS4MTPF-G-BCERE1

    Fujitsu Electronics America, Inc.

    IC RAM 4M SPI 5MHZ 8SOP.

  • R1LP5256ESP-5SI#B0

    Renesas Electronics America

    IC SRAM 256K PARALLEL 28SOP. SRAM SRAM SRAM LP(256K) 256K LP

  • R1LV5256ESP-5SI#B0

    Renesas Electronics America

    IC SRAM 256K PARALLEL 28SOP. SRAM 256kb 3V Adv. SRAM x8, SOP 55NS WTR Tube

  • 71256SA25TPGI

    IDT, Integrated Device Technology Inc

    IC SRAM 256K PARALLEL 28DIP. SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM

  • W25M512JVFIQ TR

    Winbond Electronics

    IC FLASH 512M SPI 104MHZ 16SOIC. Multichip Packages spiFlash, 512M-bit, 4Kb Uniform Sector

  • W949D2DBJX5I

    Winbond Electronics

    IC DRAM 512M PARALLEL 90VFBGA. DRAM 512M mDDR, x32, 200MHz, Industrial Temp, 46nm