US1JHE3_A/I Bei (USD) [725702pcs Hisa]
- 1 pcs$0.05097
- Nambari ya Sehemu:
- US1JHE3_A/I
- Mzalishaji:
- Vishay Semiconductor Diodes Division
- Maelezo ya kina:
- DIODE GEN PURP 600V 1A DO214AC. Rectifiers 600 Volt 1.0A 75ns 30 Amp IFSM
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - RF, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - RF and Viwango - Rectifiers - Arrays ...
- Faida ya Ushindani:
- We specialize in Vishay Semiconductor Diodes Division US1JHE3_A/I electronic components. US1JHE3_A/I can be shipped within 24 hours after order. If you have any demands for US1JHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
US1JHE3_A/I Sifa za Bidhaa
Nambari ya Sehemu :
US1JHE3_A/I
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 600V 1A DO214AC
Mfululizo :
Automotive, AEC-Q101
Hali ya Sehemu :
Active
Aina ya Diode :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Sasa - Wastani Aliyerekebishwa (Io) :
1A
Voltage - Mbele (Vf) (Max) @ Kama :
1.7V @ 1A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
75ns
Sasa - Rejea kuvuja @ Vr :
10µA @ 600V
Uwezo @ Vr, F :
10pF @ 4V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
DO-214AC, SMA
Kifurushi cha Kifaa cha Mtoaji :
DO-214AC (SMA)
Joto la Kufanya kazi - Junction :
-55°C ~ 150°C
Habari mpya kabisa
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-
BAS19WT-TP
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DIODE GEN PURP 100V 200MA SOT323. Diodes - General Purpose, Power, Switching 200mA 100V
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