ISSI, Integrated Silicon Solution Inc - IS46DR16320E-25DBLA2

KEY Part #: K937833

IS46DR16320E-25DBLA2 Bei (USD) [18234pcs Hisa]

  • 1 pcs$2.51304

Nambari ya Sehemu:
IS46DR16320E-25DBLA2
Mzalishaji:
ISSI, Integrated Silicon Solution Inc
Maelezo ya kina:
IC DRAM 512M PARALLEL 400MHZ. DRAM 512M 1.8V 32Mx16 Ext Temp DDR2
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Mantiki - Watafsiri, Shifters za Kiwango, Linear - Amplifiers - Kusudi Maalum, Maingiliano - vituo vya Ishara, Maingiliano - Mabadiliko ya Analog - Kusudi Maalum, Iliyoingizwa - PLDs (Kifaa cha mantiki cha Mpangil, PMIC - Watawala wa Ugavi wa Nguvu, Wachunguzi, Iliyoingizwa - Microprocessors and Saa / Saa - Batri za IC ...
Faida ya Ushindani:
We specialize in ISSI, Integrated Silicon Solution Inc IS46DR16320E-25DBLA2 electronic components. IS46DR16320E-25DBLA2 can be shipped within 24 hours after order. If you have any demands for IS46DR16320E-25DBLA2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS46DR16320E-25DBLA2 Sifa za Bidhaa

Nambari ya Sehemu : IS46DR16320E-25DBLA2
Mzalishaji : ISSI, Integrated Silicon Solution Inc
Maelezo : IC DRAM 512M PARALLEL 400MHZ
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR2
Saizi ya kumbukumbu : 512Mb (32M x 16)
Usafirishaji wa Saa : 400MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 400ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.9V
Joto la Kufanya kazi : -40°C ~ 105°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 84-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 84-TWBGA (8x12.5)

Habari mpya kabisa

Unaweza pia Kuvutiwa Na
  • W9825G2JB-75

    Winbond Electronics

    IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M SDR SDRAM x32, 133MHz,

  • W9825G2JB-6

    Winbond Electronics

    IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M SDR SDRAM x32, 166MHz,

  • IS66WVC4M16EALL-7010BLI

    ISSI, Integrated Silicon Solution Inc

    IC PSRAM 64M PARALLEL 54VFBGA.

  • W97AH2KBVX2I

    Winbond Electronics

    IC DRAM 1G PARALLEL 134VFBGA. DRAM 1Gb LPDDR2, x32, 400MHz, -40 85C

  • W97AH6KBVX2I

    Winbond Electronics

    IC DRAM 1G PARALLEL 134VFBGA. DRAM 1Gb LPDDR2, x16, 400MHz, -40 85C

  • MT29F2G08ABAEAH4-AATX:E TR

    Micron Technology Inc.

    IC FLASH 2G PARALLEL 63VFBGA. NAND Flash SLC 2G 256MX8 FBGA