ON Semiconductor - MJD127G

KEY Part #: K6381213

MJD127G Bei (USD) [121455pcs Hisa]

  • 1 pcs$0.25312
  • 10 pcs$0.21594
  • 100 pcs$0.16128
  • 500 pcs$0.12672
  • 1,000 pcs$0.09792

Nambari ya Sehemu:
MJD127G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS PNP DARL 100V 8A DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - RF, Thyristors - SCR, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Bridge Rectifiers and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
We specialize in ON Semiconductor MJD127G electronic components. MJD127G can be shipped within 24 hours after order. If you have any demands for MJD127G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MJD127G Sifa za Bidhaa

Nambari ya Sehemu : MJD127G
Mzalishaji : ON Semiconductor
Maelezo : TRANS PNP DARL 100V 8A DPAK
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : PNP - Darlington
Sasa - Mtoza (Ic) (Max) : 8A
Voltage - Kukusanya Emitter Kuvunja (Max) : 100V
Vce Saturdayation (Max) @ Ib, Ic : 4V @ 80mA, 8A
Sasa - Ushuru Mtoaji : 10µA
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 1000 @ 4A, 4V
Nguvu - Max : 1.75W
Mara kwa mara - Mpito : 4MHz
Joto la Kufanya kazi : -65°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji : DPAK

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