TK17E65W,S1X Bei (USD) [2740pcs Hisa]
- 1 pcs$1.38380
- 50 pcs$1.05554
- 100 pcs$0.96167
- Nambari ya Sehemu:
- TK17E65W,S1X
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N-CH 650V 17.3A TO-220AB.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moja, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - RF and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TK17E65W,S1X electronic components. TK17E65W,S1X can be shipped within 24 hours after order. If you have any demands for TK17E65W,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK17E65W,S1X Sifa za Bidhaa
Nambari ya Sehemu :
TK17E65W,S1X
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 650V 17.3A TO-220AB
Mfululizo :
DTMOSIV
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
17.3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
200 mOhm @ 8.7A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 900µA
Malango ya Lango (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1800pF @ 300V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
165W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220
Kifurushi / Kesi :
TO-220-3
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