HN1C01FE-GR,LF Bei (USD) [1436579pcs Hisa]
- 1 pcs$0.02588
- 4,000 pcs$0.02575
- 8,000 pcs$0.02317
- 12,000 pcs$0.02060
- 28,000 pcs$0.01931
- 100,000 pcs$0.01716
- Nambari ya Sehemu:
- HN1C01FE-GR,LF
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- TRANS 2NPN 50V 0.15A ES6.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Thyristors - TRIAC, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika and Transistors - IGBTs - Moja ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage HN1C01FE-GR,LF electronic components. HN1C01FE-GR,LF can be shipped within 24 hours after order. If you have any demands for HN1C01FE-GR,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN1C01FE-GR,LF Sifa za Bidhaa
Nambari ya Sehemu :
HN1C01FE-GR,LF
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS 2NPN 50V 0.15A ES6
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
2 NPN (Dual)
Sasa - Mtoza (Ic) (Max) :
150mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Vce Saturdayation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Sasa - Ushuru Mtoaji :
100nA (ICBO)
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA, 6V
Nguvu - Max :
100mW
Mara kwa mara - Mpito :
80MHz
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-563, SOT-666
Kifurushi cha Kifaa cha Mtoaji :
ES6
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