DMN30H4D0LFDE-13 Bei (USD) [783458pcs Hisa]
- 1 pcs$0.04721
- 10,000 pcs$0.04195
- Nambari ya Sehemu:
- DMN30H4D0LFDE-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 300V 0.55A 6UDFN.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Viwango - Zener - Moja, Viwango - RF, Transistors - IGBTs - Moduli, Thyristors - TRIAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN30H4D0LFDE-13 electronic components. DMN30H4D0LFDE-13 can be shipped within 24 hours after order. If you have any demands for DMN30H4D0LFDE-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN30H4D0LFDE-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMN30H4D0LFDE-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 300V 0.55A 6UDFN
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
300V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
550mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.7V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
4 Ohm @ 300mA, 10V
Vgs (th) (Max) @ Id :
2.8V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
7.6nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
187.3pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
630mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
U-DFN2020-6 (Type E)
Kifurushi / Kesi :
6-UDFN Exposed Pad
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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