Infineon Technologies - FS150R07N3E4B11BOSA1

KEY Part #: K6532758

[1060pcs Hisa]


    Nambari ya Sehemu:
    FS150R07N3E4B11BOSA1
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    IGBT MODULE VCES 650V 150A.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moduli, Viwango - Rectifiers - Moja and Transistors - Bipolar (BJT) - Moja ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies FS150R07N3E4B11BOSA1 electronic components. FS150R07N3E4B11BOSA1 can be shipped within 24 hours after order. If you have any demands for FS150R07N3E4B11BOSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FS150R07N3E4B11BOSA1 Sifa za Bidhaa

    Nambari ya Sehemu : FS150R07N3E4B11BOSA1
    Mzalishaji : Infineon Technologies
    Maelezo : IGBT MODULE VCES 650V 150A
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya IGBT : Trench Field Stop
    Usanidi : Three Phase Inverter
    Voltage - Kukusanya Emitter Kuvunja (Max) : 650V
    Sasa - Mtoza (Ic) (Max) : 150A
    Nguvu - Max : 430W
    Vce (on) (Max) @ Vge, Ic : 1.95V @ 15V, 150A
    Sasa - Ushuru Mtoaji : 1mA
    Uingilivu Ufungaji (Wakuu) @ Vce : 9.3nF @ 25V
    Uingizaji : Standard
    Mtaalam wa NTC : Yes
    Joto la Kufanya kazi : -40°C ~ 150°C
    Aina ya Kuinua : Chassis Mount
    Kifurushi / Kesi : Module
    Kifurushi cha Kifaa cha Mtoaji : Module

    Unaweza pia Kuvutiwa Na
    • VS-GB90SA120U

      Vishay Semiconductor Diodes Division

      TRANSISTOR INSLTED GATE BIPOLAR.

    • VS-GB90DA60U

      Vishay Semiconductor Diodes Division

      TRANSISTOR INSLTED GATE BIPOLAR.

    • CPV362M4K

      Vishay Semiconductor Diodes Division

      IGBT SIP MODULE 600V 31 IMS-2.

    • CPV362M4U

      Vishay Semiconductor Diodes Division

      IGBT SIP MODULE 600V 3.9A IMS-2.

    • CPV363M4U

      Vishay Semiconductor Diodes Division

      IGBT SIP MODULE 600V 6.8A IMS-2.

    • VS-GB75NA60UF

      Vishay Semiconductor Diodes Division

      IGBT 600V 70A HS CHOPPER SOT-227. Rectifiers Output & SW Modules SOT-227 IGBT