ON Semiconductor - FDN5630

KEY Part #: K6418210

FDN5630 Bei (USD) [573153pcs Hisa]

  • 1 pcs$0.06486
  • 3,000 pcs$0.06453

Nambari ya Sehemu:
FDN5630
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 60V 1.7A SSOT3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moja, Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Moja and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDN5630 electronic components. FDN5630 can be shipped within 24 hours after order. If you have any demands for FDN5630, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDN5630 Sifa za Bidhaa

Nambari ya Sehemu : FDN5630
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 60V 1.7A SSOT3
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1.7A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 100 mOhm @ 1.7A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 400pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 500mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SuperSOT-3
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3