Vishay Siliconix - IRFDC20

KEY Part #: K6414158

[12852pcs Hisa]


    Nambari ya Sehemu:
    IRFDC20
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET N-CH 600V 320MA 4-DIP.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Arrays, Transistors - Kusudi Maalum, Viwango - Bridge Rectifiers, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja and Transistors - FET, MOSFETs - RF ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix IRFDC20 electronic components. IRFDC20 can be shipped within 24 hours after order. If you have any demands for IRFDC20, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFDC20 Sifa za Bidhaa

    Nambari ya Sehemu : IRFDC20
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET N-CH 600V 320MA 4-DIP
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 600V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 320mA (Ta)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 4.4 Ohm @ 190mA, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 18nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 350pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 1W (Ta)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : 4-DIP, Hexdip, HVMDIP
    Kifurushi / Kesi : 4-DIP (0.300", 7.62mm)

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