Diodes Incorporated - ZXMN3A01E6TC

KEY Part #: K6411067

[13918pcs Hisa]


    Nambari ya Sehemu:
    ZXMN3A01E6TC
    Mzalishaji:
    Diodes Incorporated
    Maelezo ya kina:
    MOSFET N-CH 30V 2.4A SOT23-6.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Viwango - Zener - Moja, Transistors - FET, MOSFETs - RF, Moduli za Dereva za Nguvu, Transistors - IGBTs - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCR and Viwango - RF ...
    Faida ya Ushindani:
    We specialize in Diodes Incorporated ZXMN3A01E6TC electronic components. ZXMN3A01E6TC can be shipped within 24 hours after order. If you have any demands for ZXMN3A01E6TC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZXMN3A01E6TC Sifa za Bidhaa

    Nambari ya Sehemu : ZXMN3A01E6TC
    Mzalishaji : Diodes Incorporated
    Maelezo : MOSFET N-CH 30V 2.4A SOT23-6
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.4A (Ta)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 120 mOhm @ 2.5A, 10V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 3.9nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 190pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 1.1W (Ta)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : SOT-23-6
    Kifurushi / Kesi : SOT-23-6

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