Alliance Memory, Inc. - AS4C32M16MD1-5BIN

KEY Part #: K920113

[9688pcs Hisa]


    Nambari ya Sehemu:
    AS4C32M16MD1-5BIN
    Mzalishaji:
    Alliance Memory, Inc.
    Maelezo ya kina:
    IC DRAM 512M PARALLEL 60FBGA. DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: PMIC - Taa, Kidhibiti cha Ballast, Upataji wa data - Potentiometers za dijiti, Saa / Saa - Maombi Maalum, Kumbukumbu - Watawala, Mantiki - Kazi za Basi la Universal, Iliyoingizwa - FPGAs (Ardhi inayopangwa kwa Mlango, PMIC - Waongofu wa AC DC, Dawati za Offline and Maingiliano - Watawala ...
    Faida ya Ushindani:
    We specialize in Alliance Memory, Inc. AS4C32M16MD1-5BIN electronic components. AS4C32M16MD1-5BIN can be shipped within 24 hours after order. If you have any demands for AS4C32M16MD1-5BIN, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    AS4C32M16MD1-5BIN Sifa za Bidhaa

    Nambari ya Sehemu : AS4C32M16MD1-5BIN
    Mzalishaji : Alliance Memory, Inc.
    Maelezo : IC DRAM 512M PARALLEL 60FBGA
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya kumbukumbu : Volatile
    Fomati ya kumbukumbu : DRAM
    Teknolojia : SDRAM - Mobile LPDDR
    Saizi ya kumbukumbu : 512Mb (32M x 16)
    Usafirishaji wa Saa : 200MHz
    Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
    Wakati wa Upataji : 700ps
    Maingiliano ya kumbukumbu : Parallel
    Voltage - Ugavi : 1.7V ~ 1.9V
    Joto la Kufanya kazi : -40°C ~ 85°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 60-TFBGA
    Kifurushi cha Kifaa cha Mtoaji : 60-FBGA (8x9)