IXTT10N100D2 Bei (USD) [8899pcs Hisa]
- 1 pcs$5.11938
- 30 pcs$5.09391
- Nambari ya Sehemu:
- IXTT10N100D2
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- MOSFET N-CH 1000V 10A TO-267.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - RF, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - Bridge Rectifiers and Viwango - Rectifiers - Arrays ...
- Faida ya Ushindani:
- We specialize in IXYS IXTT10N100D2 electronic components. IXTT10N100D2 can be shipped within 24 hours after order. If you have any demands for IXTT10N100D2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTT10N100D2 Sifa za Bidhaa
Nambari ya Sehemu :
IXTT10N100D2
Mzalishaji :
IXYS
Maelezo :
MOSFET N-CH 1000V 10A TO-267
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.5 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
-
Malango ya Lango (Qg) (Max) @ Vgs :
200nC @ 5V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
5320pF @ 25V
Makala ya FET :
Depletion Mode
Kuondoa Nguvu (Max) :
695W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-268
Kifurushi / Kesi :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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