Infineon Technologies - IPD50R280CEAUMA1

KEY Part #: K6419606

IPD50R280CEAUMA1 Bei (USD) [120962pcs Hisa]

  • 1 pcs$0.30578
  • 2,500 pcs$0.24972

Nambari ya Sehemu:
IPD50R280CEAUMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 550V 18.1A TO252.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Kusudi Maalum, Thyristors - TRIAC, Transistors - Ushirikiano uliopangwa, Viwango - RF, Viwango - Zener - Arrays, Transistors - IGBTs - Moja and Thyristors - SCR ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD50R280CEAUMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPD50R280CEAUMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 550V 18.1A TO252
Mfululizo : CoolMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 550V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 18.1A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 13V
Njia ya Kutumia (Max) @ Id, Vgs : 280 mOhm @ 4.2A, 13V
Vgs (th) (Max) @ Id : 3.5V @ 350µA
Malango ya Lango (Qg) (Max) @ Vgs : 32.6nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 773pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 119W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO252
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63