RN2412TE85LF Bei (USD) [1760237pcs Hisa]
- 1 pcs$0.02112
- 3,000 pcs$0.02101
- 6,000 pcs$0.01827
- 15,000 pcs$0.01553
- 30,000 pcs$0.01462
- 75,000 pcs$0.01370
- 150,000 pcs$0.01218
- Nambari ya Sehemu:
- RN2412TE85LF
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- TRANS PREBIAS PNP 0.2W SMINI.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - IGBTs - Arrays, Viwango - Zener - Arrays, Moduli za Dereva za Nguvu, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage RN2412TE85LF electronic components. RN2412TE85LF can be shipped within 24 hours after order. If you have any demands for RN2412TE85LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN2412TE85LF Sifa za Bidhaa
Nambari ya Sehemu :
RN2412TE85LF
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS PREBIAS PNP 0.2W SMINI
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
22 kOhms
Upinzani - Base ya Emitter (R2) :
-
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Sasa - Ushuru Mtoaji :
100nA (ICBO)
Mara kwa mara - Mpito :
200MHz
Nguvu - Max :
200mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji :
S-Mini
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