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  1. Nyumbani
  2. Bidhaa
  3. Duru Jumuishi (ICs)
  4. Kumbukumbu
  5. IS42S32160C-6BI-TR

ISSI, Integrated Silicon Solution Inc - IS42S32160C-6BI-TR

KEY Part #: K921915

[9920pcs Hisa]

    Nambari ya Sehemu:
    IS42S32160C-6BI-TR
    Mzalishaji:
    ISSI, Integrated Silicon Solution Inc
    Maelezo ya kina:
    IC DRAM 512M PARALLEL 90WBGA.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: PMIC - Usimamizi wa Nguvu - Maalum, Mantiki - Buffa, Madereva, Wapokeaji, Waendeshaji , Kumbukumbu - Batri, Saa / Majira - Muda uliopangwa na Oscillators, Maelewano - Sensor, Kugusa uwezo, PMIC - Madereva wa Laser, PMIC - Marejeo ya Voltage and PMIC - Usajili wa Voltage - Kusudi Maalum ...
    Faida ya Ushindani:
    We specialize in ISSI, Integrated Silicon Solution Inc IS42S32160C-6BI-TR electronic components. IS42S32160C-6BI-TR can be shipped within 24 hours after order. If you have any demands for IS42S32160C-6BI-TR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IS42S32160C-6BI-TR Sifa za Bidhaa

    Nambari ya Sehemu : IS42S32160C-6BI-TR
    Mzalishaji : ISSI, Integrated Silicon Solution Inc
    Maelezo : IC DRAM 512M PARALLEL 90WBGA
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya kumbukumbu : Volatile
    Fomati ya kumbukumbu : DRAM
    Teknolojia : SDRAM
    Saizi ya kumbukumbu : 512Mb (16M x 32)
    Usafirishaji wa Saa : 166MHz
    Andika Wakati wa Msaada - Neno, Ukurasa : -
    Wakati wa Upataji : 5.4ns
    Maingiliano ya kumbukumbu : Parallel
    Voltage - Ugavi : 3V ~ 3.6V
    Joto la Kufanya kazi : -40°C ~ 85°C (TA)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 90-LFBGA
    Kifurushi cha Kifaa cha Mtoaji : 90-WBGA (8x13)

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