RN1130MFV,L3F Bei (USD) [2968934pcs Hisa]
- 1 pcs$0.01252
- 8,000 pcs$0.01246
- Nambari ya Sehemu:
- RN1130MFV,L3F
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- TRANS PREBIAS NPN 0.15W VESM.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - Moja, Moduli za Dereva za Nguvu, Transistors - IGBTs - Moduli, Transistors - IGBTs - Arrays, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Thyristors - TRIAC ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage RN1130MFV,L3F electronic components. RN1130MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1130MFV,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1130MFV,L3F Sifa za Bidhaa
Nambari ya Sehemu :
RN1130MFV,L3F
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS PREBIAS NPN 0.15W VESM
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
100 kOhms
Upinzani - Base ya Emitter (R2) :
100 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
250MHz
Nguvu - Max :
150mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-723
Kifurushi cha Kifaa cha Mtoaji :
VESM
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