IXFT6N100F Bei (USD) [9323pcs Hisa]
- 1 pcs$6.01115
- 10 pcs$5.41003
- 100 pcs$4.44825
- 500 pcs$3.72691
- Nambari ya Sehemu:
- IXFT6N100F
- Mzalishaji:
- IXYS-RF
- Maelezo ya kina:
- MOSFET N-CH 1000V 6A TO268.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - RF, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - Zener - Arrays and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in IXYS-RF IXFT6N100F electronic components. IXFT6N100F can be shipped within 24 hours after order. If you have any demands for IXFT6N100F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT6N100F Sifa za Bidhaa
Nambari ya Sehemu :
IXFT6N100F
Mzalishaji :
IXYS-RF
Maelezo :
MOSFET N-CH 1000V 6A TO268
Mfululizo :
HiPerRF™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.9 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 2.5mA
Malango ya Lango (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1770pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
180W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-268 (IXFT)
Kifurushi / Kesi :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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