TPW1R306PL,L1Q Bei (USD) [66799pcs Hisa]
- 1 pcs$0.59163
- 5,000 pcs$0.58868
- Nambari ya Sehemu:
- TPW1R306PL,L1Q
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Thyristors - SCRs - Moduli, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - IGBTs - Moja ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TPW1R306PL,L1Q electronic components. TPW1R306PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPW1R306PL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPW1R306PL,L1Q Sifa za Bidhaa
Nambari ya Sehemu :
TPW1R306PL,L1Q
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
X35 PB-F POWER MOSFET TRANSISTOR
Mfululizo :
U-MOSIX-H
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
260A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.29 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
91nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
8100pF @ 30V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
960mW (Ta), 170W (Tc)
Joto la Kufanya kazi :
175°C
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-DSOP Advance
Kifurushi / Kesi :
8-PowerVDFN
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