Nambari ya Sehemu :
FCP190N65F
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 650V 20.6A TO220-3
Mfululizo :
FRFET®, SuperFET® II
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
20.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
190 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
5V @ 2mA
Malango ya Lango (Qg) (Max) @ Vgs :
78nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3225pF @ 25V
Kuondoa Nguvu (Max) :
208W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220-3
Kifurushi / Kesi :
TO-220-3