Taiwan Semiconductor Corporation - TSM10N80CZ C0G

KEY Part #: K6399648

TSM10N80CZ C0G Bei (USD) [27833pcs Hisa]

  • 1 pcs$1.48075

Nambari ya Sehemu:
TSM10N80CZ C0G
Mzalishaji:
Taiwan Semiconductor Corporation
Maelezo ya kina:
MOSFET N-CH 800V 9.5A TO220.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moduli, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Viwango - Rectifiers - Moja, Viwango - Rectifiers - Arrays and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM10N80CZ C0G Sifa za Bidhaa

Nambari ya Sehemu : TSM10N80CZ C0G
Mzalishaji : Taiwan Semiconductor Corporation
Maelezo : MOSFET N-CH 800V 9.5A TO220
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.05 Ohm @ 4.75A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 53nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2336pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 48W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220
Kifurushi / Kesi : TO-220-3