NXP USA Inc. - PDTD123YS,126

KEY Part #: K6527751

[2727pcs Hisa]


    Nambari ya Sehemu:
    PDTD123YS,126
    Mzalishaji:
    NXP USA Inc.
    Maelezo ya kina:
    TRANS PREBIAS NPN 500MW TO92-3.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Moduli za Dereva za Nguvu, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Moja and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
    Faida ya Ushindani:
    We specialize in NXP USA Inc. PDTD123YS,126 electronic components. PDTD123YS,126 can be shipped within 24 hours after order. If you have any demands for PDTD123YS,126, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PDTD123YS,126 Sifa za Bidhaa

    Nambari ya Sehemu : PDTD123YS,126
    Mzalishaji : NXP USA Inc.
    Maelezo : TRANS PREBIAS NPN 500MW TO92-3
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya Transistor : NPN - Pre-Biased
    Sasa - Mtoza (Ic) (Max) : 500mA
    Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
    Upinzani - Msingi (R1) : 2.2 kOhms
    Upinzani - Base ya Emitter (R2) : 10 kOhms
    DC Sasa Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V
    Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
    Sasa - Ushuru Mtoaji : 500nA
    Mara kwa mara - Mpito : -
    Nguvu - Max : 500mW
    Aina ya Kuinua : Through Hole
    Kifurushi / Kesi : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Kifurushi cha Kifaa cha Mtoaji : TO-92-3