Nambari ya Sehemu :
PDTD123YS,126
Mzalishaji :
NXP USA Inc.
Maelezo :
TRANS PREBIAS NPN 500MW TO92-3
Hali ya Sehemu :
Obsolete
Aina ya Transistor :
NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) :
500mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
2.2 kOhms
Upinzani - Base ya Emitter (R2) :
10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
70 @ 50mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 2.5mA, 50mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
-
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Kifurushi cha Kifaa cha Mtoaji :
TO-92-3