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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - Bipolar (BJT) - Moja
  5. NJVMJD112G

ON Semiconductor - NJVMJD112G

KEY Part #: K6380942

NJVMJD112G Bei (USD) [238149pcs Hisa]

  • 1 pcs$0.15531
  • 1,650 pcs$0.12425
Nambari ya Sehemu:
NJVMJD112G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS NPN DARL 100V 2A DPAK-4.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - JFETs and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in ON Semiconductor NJVMJD112G electronic components. NJVMJD112G can be shipped within 24 hours after order. If you have any demands for NJVMJD112G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NJVMJD112G Sifa za Bidhaa

Nambari ya Sehemu : NJVMJD112G
Mzalishaji : ON Semiconductor
Maelezo : TRANS NPN DARL 100V 2A DPAK-4
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : NPN - Darlington
Sasa - Mtoza (Ic) (Max) : 2A
Voltage - Kukusanya Emitter Kuvunja (Max) : 100V
Vce Saturdayation (Max) @ Ib, Ic : 3V @ 40mA, 4A
Sasa - Ushuru Mtoaji : 20µA
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 1000 @ 2A, 3V
Nguvu - Max : 1.75W
Mara kwa mara - Mpito : 25MHz
Joto la Kufanya kazi : -65°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji : DPAK

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