MMUN2132LT1G Bei (USD) [4311730pcs Hisa]
- 1 pcs$0.00858
- 3,000 pcs$0.00826
- 6,000 pcs$0.00745
- 15,000 pcs$0.00648
- 30,000 pcs$0.00583
- 75,000 pcs$0.00518
- 150,000 pcs$0.00432
- Nambari ya Sehemu:
- MMUN2132LT1G
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- TRANS PREBIAS PNP 246MW SOT23-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Viwango - Bridge Rectifiers and Viwango - Zener - Arrays ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor MMUN2132LT1G electronic components. MMUN2132LT1G can be shipped within 24 hours after order. If you have any demands for MMUN2132LT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MMUN2132LT1G Sifa za Bidhaa
Nambari ya Sehemu :
MMUN2132LT1G
Mzalishaji :
ON Semiconductor
Maelezo :
TRANS PREBIAS PNP 246MW SOT23-3
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
4.7 kOhms
Upinzani - Base ya Emitter (R2) :
4.7 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
15 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic :
250mV @ 1mA, 10mA
Sasa - Ushuru Mtoaji :
500nA
Mara kwa mara - Mpito :
-
Nguvu - Max :
246mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji :
SOT-23-3 (TO-236)
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