Vishay Semiconductor Diodes Division - UH1DHE3_A/I

KEY Part #: K6437508

UH1DHE3_A/I Bei (USD) [691317pcs Hisa]

  • 1 pcs$0.05350
  • 7,500 pcs$0.04892

Nambari ya Sehemu:
UH1DHE3_A/I
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 200V 1A DO214AC. Rectifiers 1A, 200V, 25NS, PLANNAR FER RECT SMD
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Viwango - Zener - Arrays, Transistors - JFETs, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division UH1DHE3_A/I electronic components. UH1DHE3_A/I can be shipped within 24 hours after order. If you have any demands for UH1DHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UH1DHE3_A/I Sifa za Bidhaa

Nambari ya Sehemu : UH1DHE3_A/I
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 200V 1A DO214AC
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Sasa - Wastani Aliyerekebishwa (Io) : 1A
Voltage - Mbele (Vf) (Max) @ Kama : 1.05V @ 1A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 25ns
Sasa - Rejea kuvuja @ Vr : 1µA @ 200V
Uwezo @ Vr, F : 17pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AC, SMA
Kifurushi cha Kifaa cha Mtoaji : DO-214AC (SMA)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

Unaweza pia Kuvutiwa Na
  • GL34G/1

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213.

  • NSB8KT-E3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 8A TO263AB. Rectifiers 800 Volt 8.0 Amp 125 Amp IFSM

  • NSB8MT-E3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1KV 8A TO263AB. Rectifiers 1000 Volt 8.0 Amp 125 Amp IFSM

  • NSB8JT-E3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 8A TO263AB. Rectifiers RECOMMENDED ALT 625-NSB8JT-E3

  • MBRB10H100-E3/45

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 100V 10A TO263AB. Schottky Diodes & Rectifiers 100 Volt 10A Single 250 Amp IFSM

  • NSB8AT-E3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 8A TO263AB. Rectifiers 50 Volt 8.0 Amp 125 Amp IFSM