Vishay Semiconductor Diodes Division - LL4154-GS08

KEY Part #: K6458689

LL4154-GS08 Bei (USD) [4676071pcs Hisa]

  • 1 pcs$0.00835
  • 12,500 pcs$0.00831

Nambari ya Sehemu:
LL4154-GS08
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 35V 300MA SOD80. Diodes - General Purpose, Power, Switching 35 Volt 300mA 2.0 Amp IFSM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Viwango - Rectifiers - Arrays, Thyristors - TRIAC, Transistors - FET, MOSFETs - RF, Thyristors - SCRs - Moduli, Thyristors - SCR, Transistors - IGBTs - Moduli and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division LL4154-GS08 electronic components. LL4154-GS08 can be shipped within 24 hours after order. If you have any demands for LL4154-GS08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

LL4154-GS08 Sifa za Bidhaa

Nambari ya Sehemu : LL4154-GS08
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 35V 300MA SOD80
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 35V
Sasa - Wastani Aliyerekebishwa (Io) : 300mA
Voltage - Mbele (Vf) (Max) @ Kama : 1V @ 30mA
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 4ns
Sasa - Rejea kuvuja @ Vr : 100nA @ 25V
Uwezo @ Vr, F : 4pF @ 0V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-213AC, MINI-MELF, SOD-80
Kifurushi cha Kifaa cha Mtoaji : SOD-80 MiniMELF
Joto la Kufanya kazi - Junction : 175°C (Max)

Unaweza pia Kuvutiwa Na
  • BAT54T

    ON Semiconductor

    DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE

  • BAS21E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode

  • BAL99E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode